Method for fabricating semiconductor device and display device

Details Method for fabricating semiconductor device and display device Method for fabricating semiconductor device and display device

2008-06-10

2008-06-10

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE23166, C438S675000, C438S760000, C427S098300

Reexamination Certificate

active

07384862

ABSTRACT:
It is an object of the present invention to alleviate unevenness due to an opening for making a contact with the lower layer even when the opening has a large diameter (1 μm or more). Thus, it is a further object of the invention to reduce defects caused by the unevenness due to the contact hole. It is a feature of the invention to form a wiring by filling the contact hole with conductive fine particles. The conductive fine particles can be easily dispersed into a wiring material by using conductive fine particles having high wettability with the wiring material, thereby making a contact. Thus, planarization of a contact hole can be achieved without performing a reflow process. Further, more planarity can be obtained by performing a reflow process in addition, and the reliability is improved accordingly.

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