Dual direction ESD clamp based on snapback NMOS cell with...

Details Dual direction ESD clamp based on snapback NMOS cell with... Dual direction ESD clamp based on snapback NMOS cell with...

2008-07-01

2008-07-01

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07394133

ABSTRACT:
In an ESD protection structure, dual direction ESD protection is provided by forming an n-well isolation ring around an NMOS device so that the p-well in which the NMOS drain is formed is isolated from the underlying p-substrate by the n-well isolation ring. By forming the n-well isolation ring the p-n-p-n structure of an embedded SCR for reverse ESD protection is provided. The width of the n-well isolation ring and its spacing from the NMOS drain are adjusted to provide the desired SCR parameters.

REFERENCES:
patent: 6399990 (2002-06-01), Brennan et al.
patent: 6406953 (2002-06-01), Li et al.
patent: 2003/0071310 (2003-04-01), Salling et al.
patent: 2004/0155300 (2004-08-01), Baird et al.
patent: 2005/0224882 (2005-10-01), Chatty et al.

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