Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-03-11

2008-03-11

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000

Reexamination Certificate

active

07342275

ABSTRACT:
Wirings including first conductive layer patterns and insulating mask layer patterns are formed on a substrate. Insulating spacers are formed on sidewalls of the wirings. Self-aligned contact pads including portions of a second conductive layer are formed to contact with surfaces of the insulating spacers and to fill up a gap between the wirings. An interlayer dielectric layer is formed on the substrate where the contact pads are formed and is then partially etched to form contact holes exposing the contact pads. A selective epitaxial silicon layer is formed on the contact pads exposed through the contact holes to cover the insulating mask layer patterns. Thus, a short-circuit between the lower wiring and an upper wiring formed in the contact holes is prevented.

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English language abstract of Korean Publication No. 1999-84959, Feb. 2001.
English language abstract of Korean Publication No. 2002-58285, Jul. 2002.

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