Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-08
2008-07-08
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S104000, C257S421000, C257S701000, C257SE21229, C257SE21293, C257SE21304, C257SE21278, C257SE21352
Reexamination Certificate
active
07397074
ABSTRACT:
An exemplary array of thermally-assisted magnetic memory structures includes a plurality of magnetic memory elements, each magnetic memory element being near a diode. A diode near a selected magnetic memory element can be heated by absorbing energy from a radio frequency electromagnetic field. The heated diode can be used to elevate the temperature of the selected magnetic memory element to thermally assist in switching the magnetic state of the magnetic memory element upon application of a write current.
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U.S. Appl. No. 10/713,510, Nickel.
Myers Bigel & Sibley & Sajovec
Nhu David
Samsung Electronics Co,. Ltd.
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