CMOS transistor and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S069000, C257S204000, C257S357000

Reexamination Certificate

active

07315063

ABSTRACT:
A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. The second conductivity type MOS transistor also comprises a source/drain region formed in relation to an epitaxial layer formed in a recess region.

REFERENCES:
patent: 6605498 (2003-08-01), Murthy et al.
patent: 6656853 (2003-12-01), Ito
patent: 6703271 (2004-03-01), Yeo et al.
patent: 6730551 (2004-05-01), Lee et al.
patent: 6734527 (2004-05-01), Xiang
patent: 7118952 (2006-10-01), Chen et al.
patent: 2005/0035470 (2005-02-01), Ko et al.
patent: 2005/0082616 (2005-04-01), Chen et al.
patent: 2005/0179066 (2005-08-01), Murthy et al.
patent: 10092947 (1998-04-01), None
patent: 2003179157 (2003-06-01), None
patent: 10-2003-0082538 (2003-10-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

CMOS transistor and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CMOS transistor and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CMOS transistor and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2803767

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.