Composite dielectric forming methods and composite dielectrics

Details Composite dielectric forming methods and composite dielectrics Composite dielectric forming methods and composite dielectrics

2008-07-01

2008-07-01

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21010, C438S778000

Reexamination Certificate

active

07393796

ABSTRACT:
A composite dielectric forming method includes atomic layer depositing alternate layers of hafnium oxide and lanthanum oxide over a substrate. The hafnium oxide can be thermally stable, crystalline hafnium oxide and the lanthanum oxide can be thermally stable, crystalline lanthanum oxide. A transistor may comprise the composite dielectric as a gate dielectric. A capacitor may comprise the composite dielectric as a capacitor dielectric.

REFERENCES:
patent: 6660660 (2003-12-01), Haukka et al.
patent: 6960538 (2005-11-01), Ahn et al.
patent: 7105461 (2006-09-01), Ahn et al.
patent: 2002/0172768 (2002-11-01), Endo et al.
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2003/0227033 (2003-12-01), Ahn et al.
patent: 2004/0043149 (2004-03-01), Gordon
J.M. Leger et al., Pressure-Induced phase transistions and volume changes in HfO2up to 50 GPa, Jun. 1993 Physical Review B, vol. 48, No. 1, pp. 93-98.
I.A. El-Shanshoury et al., “Polymorphic Behavior of Thin Evaporated Films of Zirconium and Hafnium Oxides”, Aug. 1969, Journal of The American Ceramic Society, vol. 53, No. 5, pp. 264-268.
M. Ritala et al., “Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy”, Apr. 1994, Thin Solid Films, 250, pp. 72-80.
K. Kukli et al., “Tailoring the dielectric properties of HfO2—Ta2O5nanolaminates”, Apr. 1996, Applied Phys. Letters 68, pp. 3737-3739.
J. Aarik, et al, “Influence of substrate temperature on atomic layer growth and properties of HfO2thin films”, Aug. 1998, Thin Solid Films 340, pp. 110-116.
T. Suntola, “Atomic Layer Epitaxy”, Apr. 1989, Materials Science Reports 4, pp. 261-312.
M. Ritala, et al, “Perfectly Conformal TiN and AI2O3Films Deposited by Atomic Layer Deposition”, 1999, Chemical Vapor Deposition, pp. 5-7.
K. Kukli, et al, “Properties of Ta2O3-Based Dielectric Nanolaminates Deposited by Atomic Layer Epitaxy”, Jan. 1997, J.Electrochem.Soc., vol. 144, No. 1, pp. 300-306.
J. Aarik, et al “Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process”, Apr. 1997, J. Crystal Growth 181, pp. 259-264.
K. J. Eisentraut and R.E. Stevers, “Volatile Rare Earth Chelates”, Nov. 1965, Journal of the American Chemical Society, 87:22, pp. 5254-5256.
G.D. Wilk et al., “High-K gate dielectric: Current status and materials properties considerations”, May 2001, Journal of Applied Physics, vol. 89, No. 10, pp. 5243-5275.
Nieminen, M. et al., “Formation and stability of Lanthanum oxide thin films deposited from βdiketonate precursor”, Jan. 2001, Applied Surface Science, vol. 174, No. 2, pp. 155-165.
H. Ibegazene, et al, “Yttria-stabilized hafnia-zirconia thermal barrier coatings: the influence of hafnia addition addition on TBC structure and high-temperature behavior”, Journal of Materials Science 30, pp. 938-951, Feb. 1995.
J. Wang et al., “Hafnia and hafnia-toughened ceramics”, 1992, Journal of Materials Science, 27, pp. 5397-5430.
J.M. Leger et al., “Materials potentially harder than diamond: Quenchable high-pressure phase of transition Metal dioxides”, 1994, Journal of Materials Science Letters 13, pp. 1688-1690.

Affiliated with

Also associated with

Rating

Composite dielectric forming methods and composite dielectrics does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Composite dielectric forming methods and composite dielectrics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Composite dielectric forming methods and composite dielectrics will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2798937