Method for patterning a semiconductor component

Details Method for patterning a semiconductor component Method for patterning a semiconductor component

2008-05-27

2008-05-27

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000, C438S303000, C257SE21618

Reexamination Certificate

active

07378321

ABSTRACT:
In a method for patterning a semiconductor component a first cover layer is applied to a first region and a second region of a semiconductor component being arranged in a semiconductor substrate. The first region is different from the second region. The first cover layer is patterned using a photolithographic mask so that the first region is uncovered and the second region remains covered by the first cover layer. The first region is uncovered, a second cover layer is applied to the uncovered first region, and the first cover layer is removed so that the second region is uncovered. The uncovered second region is then doped.

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patent: 2005/0001267 (2005-01-01), Miyagawa et al.
patent: 2005/0170659 (2005-08-01), Hanafi et al.
patent: 19603794 (1997-01-01), None

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