Methods and apparatus with silicide on conductive structures

Details Methods and apparatus with silicide on conductive structures Methods and apparatus with silicide on conductive structures

2008-03-18

2008-03-18

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C438S299000, C438S592000, C257S444000

Reexamination Certificate

active

07344937

ABSTRACT:
Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not contaminate other components such as the photoconversion devices of an imager integrated circuit (IC). The photoconversion devices are blocked during silicide formation and are therefore not contaminated with silicide or metallic components. In other exemplary embodiments, each pixel of an imager also includes an optional in-pixel capacitor that has stabilized capacitance versus voltage characteristics due to its metal-dielectric-polysilicon structure, where the metal is a metal silicide over a conductive silicon layer.

REFERENCES:
patent: 5086370 (1992-02-01), Yasaitis
patent: 6143613 (2000-11-01), Lin
patent: 6194258 (2001-02-01), Wuu
patent: 6372640 (2002-04-01), Chen et al.
patent: 6383882 (2002-05-01), Lee et al.
patent: 6391767 (2002-05-01), Huster et al.
patent: 6414342 (2002-07-01), Rhodes
patent: 6420273 (2002-07-01), Lin
patent: 6518618 (2003-02-01), Fazio et al.
patent: 6528381 (2003-03-01), Lee et al.
patent: 6583052 (2003-06-01), Shin et al.
patent: 6602774 (2003-08-01), Fontana et al.
patent: 6667204 (2003-12-01), Kim
patent: 6667233 (2003-12-01), Ryoo et al.
patent: 6700163 (2004-03-01), Breitwisch et al.
patent: 6737291 (2004-05-01), Lim
patent: 7012000 (2006-03-01), Hong
patent: 2001/0012225 (2001-08-01), Rhodes
patent: 2003/0082881 (2003-05-01), Chang et al.
patent: 2004/0104412 (2004-06-01), Rhodes

Affiliated with

Also associated with

Rating

Methods and apparatus with silicide on conductive structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods and apparatus with silicide on conductive structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods and apparatus with silicide on conductive structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2790727