Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-09
2011-08-09
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S439000, C438S454000, C257S339000, C257S448000, C257SE29009, C257SE29017
Reexamination Certificate
active
07994006
ABSTRACT:
A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer periphery of a first area. A cell portion formed in the first area includes a first base layer of a second conductivity type, a source layer and a control electrode formed in the first base layer and the source layer. The device also includes a terminating portion formed in the drift layer including a second base layer of a second conductivity type, an impurity diffused layer of a second conductivity type, and a metallic compound whose end surface on the terminating portion side is positioned on the cell portion side away from the end surface of the impurity diffused layer on the terminal portion side.
REFERENCES:
patent: 5521409 (1996-05-01), Hshieh et al.
patent: 5612564 (1997-03-01), Fujishima et al.
patent: 5877528 (1999-03-01), So
patent: 5877529 (1999-03-01), So et al.
patent: 6043126 (2000-03-01), Kinzer
patent: 6051863 (2000-04-01), Hause et al.
patent: 6104060 (2000-08-01), Hsieh et al.
patent: 6404025 (2002-06-01), Hsieh et al.
patent: 6413822 (2002-07-01), Williams et al.
patent: 6621122 (2003-09-01), Qu
patent: 6664590 (2003-12-01), Deboy
patent: 6674126 (2004-01-01), Iwamoto et al.
patent: 6707100 (2004-03-01), Gajda
patent: 6747315 (2004-06-01), Sakamoto
patent: 6803629 (2004-10-01), Tihanyi
patent: 2002/0024056 (2002-02-01), Miyakoshi et al.
patent: 2002/0117732 (2002-08-01), Letor et al.
patent: 2003/0047778 (2003-03-01), Nakamura et al.
patent: 2003/0178672 (2003-09-01), Hatakeyama et al.
patent: 2003/0178676 (2003-09-01), Henninger et al.
patent: 6-275632 (1994-09-01), None
patent: 7-86565 (1995-03-01), None
patent: 2000-1833337 (2000-06-01), None
Aida Satoshi
Izumisawa Masaru
Kouzuki Shigeo
Yoshioka Hironori
Kabushiki Kaisha Toshiba
Kim Su C
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Smith Matthew
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