Material for forming resist protecting film for use in...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S273100, C430S327000, C430S396000, C524S543000, C524S544000, C524S545000, C524S546000, C524S547000

Reexamination Certificate

active

07371510

ABSTRACT:
Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

REFERENCES:
patent: 3895949 (1975-07-01), Akamatsu et al.
patent: 5282066 (1994-01-01), Yu et al.
patent: 5728508 (1998-03-01), Takemura et al.
patent: 6136505 (2000-10-01), Tanabe et al.
patent: 7129009 (2006-10-01), French et al.
patent: 2004/0075895 (2004-04-01), Lin
patent: 2005/0123863 (2005-06-01), Chang et al.
patent: 2005/0175940 (2005-08-01), Dierichs
patent: 2005/0186516 (2005-08-01), Endo et al.
patent: 2005/0202347 (2005-09-01), Houlihan et al.
patent: 2005/0250898 (2005-11-01), Maeda et al.
patent: 2005/0266354 (2005-12-01), Li et al.
patent: 2006/0029884 (2006-02-01), Hatakeyama et al.
patent: 2006/0105272 (2006-05-01), Gallagher et al.
patent: 2006/0111550 (2006-05-01), Hata et al.
patent: 2006/0234164 (2006-10-01), Rhodes et al.
patent: 2006/0275704 (2006-12-01), Hinsberg, III
patent: 2006/0275706 (2006-12-01), Corliss et al.
patent: 62-65326 (1987-03-01), None
patent: 7-253674 (1995-10-01), None
patent: 8-76382 (1996-03-01), None
patent: 10-303114 (1998-11-01), None
patent: 11-352697 (1999-12-01), None
patent: 99/49504 (1999-09-01), None
Hoffnagle, J.A. et al., “Liquid immersion deep-ultraviolet interferometric lithography”,Journal of Vacuum Science and Technology, B 17(6), pp. 3306 to 3309 (1999).
Switkes, M. et al., “Immersion lithography at 157 nm”,Journal of Vacuum Science and Technology, B 19(6), pp. 2353 to 2356 (2001).
Switkes, M. et al., “Resolution Enhancement of 157 nm, Lithography by Liquid Immersion”Proceedings of SPIE, vol. 4691, pp. 459 to 465 (2002).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Material for forming resist protecting film for use in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Material for forming resist protecting film for use in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Material for forming resist protecting film for use in... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2787847

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.