Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2008-04-01
2008-04-01
Pham, Hoai v (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S778000, C257SE31117, C257SE51020, C257SE23116, C257SE23121, C257SE23124, C257SE23125
Reexamination Certificate
active
07352070
ABSTRACT:
Improved encapsulated, overmolded and/or underfilled electrical components having a complete encapsulation, overmolding and/or underfilling with a coefficient of thermal expansion that is uniform and substantially free of gradients includes a polymeric matrix and an inorganic filler having a platelet geometric structure. The platelet structure of the filler allows a desirable coefficient of thermal expansion to be achieved using a very low level of filler material. This low level of filler material facilitates lower viscosity during forming of the encapsulation and/or overmolding, thereby facilitating complete filling of a mold cavity and underfilling of space between a circuit board and a semi-conductor chip electrically connected to the circuit board. In addition, the low viscosity has processing advantages that reduce the potential for damage to electrical components during encapsulation, overmolding and/or underfilling.
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Brandenburg Scott D.
Ellis Thomas S.
Myers Bruce A.
Novak Glen E.
Tsai Jeenhuei S.
Delphi Technologies Inc.
Funke Jimmy L.
Nguyen Dilinh
Pham Hoai v
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