High-mobility trench MOSFETs

Details High-mobility trench MOSFETs High-mobility trench MOSFETs

2011-08-09

2011-08-09

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S330000, C257S341000, C257SE21418, C257SE29256

Reexamination Certificate

active

07994005

ABSTRACT:
High-mobility vertical trench DMOSFETs and methods for manufacturing are disclosed. A source region, a drain region or a channel region of a high-mobility vertical trench DMOSFET may comprise silicon germanium (SiGe) that increases the mobility of the charge carriers in the channel region. In some embodiments the channel region may be strained to increase channel charge carriers mobility.

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