Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2008-04-01
2008-04-01
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S384000, C438S385000, C438S014000, C257SE27047
Reexamination Certificate
active
07351639
ABSTRACT:
A method and structure for increasing an electrical resistance of a resistor that is within a semiconductor structure, by oxidizing or nitridizing a fraction of a surface layer of the resistor with oxygen
itrogen (i.e., oxygen or nitrogen) particles, respectively. The semiconductor structure may include a semiconductor wafer, a semiconductor chip, and an integrated circuit. The method and structure comprises five embodiments. The first embodiment comprises heating an interior of a heating chamber that includes the oxygen
itrogen particles as gaseous oxygen
itrogen-comprising molecules (e.g., molecular oxygen
itrogen). The second embodiment comprises heating the fraction of the surface layer by a beam of radiation (e.g., laser radiation), or a beam of particles, such that the semiconductor structure is within a chamber that includes the oxygen/particles as gaseous oxygen
itrogen-comprising molecules (e.g., molecular oxygen
itrogen). The third embodiment comprises: using a plasma chamber to generate plasma oxygen
itrogen ions; and applying a DC voltage to the plasma oxygen
itrogen ions to accelerate the plasma oxygen
itrogen ions into the resistor such that the oxygen
itrogen particles include the plasma oxygen
itrogen ions. The fourth embodiment comprises using an anodization circuit to electrolytically generate oxygen
itrogen ions in an electrolytic solution in which the resistor is immersed, wherein the oxygen
itrogen particles include the electrolytically-generated oxygen
itrogen ions. The fifth embodiment comprises immersing the semiconductor structure in a chemical solution which includes the oxygen
itrogen particles, wherein the oxygen
itrogen particles may include oxygen
itrogen-comprising liquid molecules, oxygen
itrogen ions, or an oxygen
itrogen-comprising gas dissolved in the chemical solution under pressurization.
REFERENCES:
patent: 3148129 (1964-09-01), Basseches et al.
patent: 4292384 (1981-09-01), Straughan et al.
patent: 4485370 (1984-11-01), Poisel
patent: 4533935 (1985-08-01), Mochizuki
patent: 4707909 (1987-11-01), Blanchard
patent: 4785157 (1988-11-01), Gofuku et al.
patent: 5005101 (1991-04-01), Gallagher et al.
patent: 5167935 (1992-12-01), Lerner
patent: 5232865 (1993-08-01), Manning et al.
patent: 5470780 (1995-11-01), Shishiguchi
patent: 5547881 (1996-08-01), Wang et al.
patent: 5661503 (1997-08-01), Terai
patent: 5917286 (1999-06-01), Scholl et al.
patent: 6015728 (2000-01-01), Chou
patent: 6031250 (2000-02-01), Brandes et al.
patent: 6043516 (2000-03-01), Schulze
patent: 6127217 (2000-10-01), Madurawe et al.
patent: 09-219382 (1997-08-01), None
patent: 10-207472 (1999-07-01), None
Ballantine Arne W.
Edelstein Daniel C.
Stamper Anthony K.
International Business Machines - Corporation
Schmeiser Olsen & Watts
Steinberg William H.
Tsai H. Jey
LandOfFree
Increasing an electrical resistance of a resistor by... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Increasing an electrical resistance of a resistor by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Increasing an electrical resistance of a resistor by... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2776750