Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2008-07-01

2008-07-01

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S128000, C438S129000, C438S257000, C438S278000, C438S290000, C438S279000, C438S258000, C438S201000, C257SE21244, C257SE21548

Reexamination Certificate

active

07393737

ABSTRACT:
A semiconductor device which, in spite of the existence of a dummy active region, eliminates the need for a larger chip area and improves the surface flatness of the semiconductor substrate. In the process of manufacturing it, a thick gate insulating film for a high voltage MISFET is formed over an n-type buried layer as an active region and a resistance element IR of an internal circuit is formed over the gate insulating film. Since the thick gate insulating film lies between the n-type buried layer and the resistance element IR, the coupling capacitance produced between the substrate (n-type buried layer) and the resistance element IR is reduced.

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University of the Sciences in Philadelphia; Remington: The Science and Practice of Pharmacy. 20thed.; Baltimore: Lippincott Williams & Wilkins, 2000, pp. 858-893.

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