Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2008-01-29
2008-01-29
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S059000, C438S014000, C438S016000
Reexamination Certificate
active
07323116
ABSTRACT:
A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured self-bias voltage value with an attribute of the process, if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope.
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Annapragada Rao
Cheng Chia Cheng
Deshmukh Subhash
Guiney Timothy J.
Ahmed Shamim
IP Strategy Group, P.C.
Lam Research Corporation
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