Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-22
2011-03-22
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S680000, C438S687000, C438S791000, C438S792000
Reexamination Certificate
active
07910474
ABSTRACT:
An object of the present invention is to provide a semiconductor device which comprises a barrier film having a high etching selection ratio of the interlayer insulating film thereto, a good preventive function against the Cu diffusion, a low dielectric constant and excellent adhesiveness to the Cu interconnection and a manufacturing method thereof.The barrier film (for instance, a second barrier film6) disposed between the interconnection or the via plug and its overlying interlayer insulating film is made to have a layered structure made of a plurality of films containing silicon and carbon (preferably, silicon, carbon and nitrogen), with different carbon contents, and, in particular, a low-carbon-concentration film6awith a small carbon content is set to be a lower layer therein and a high-carbon-concentration film6bwith a large carbon content is set to be an upper layer therein, whereby the effectual prevention against the Cu diffusion, a high etching selection ratio and good adhesiveness to the Cu interconnection can be certainly provided by the presence of the low-carbon-concentration film6a, while the overall dielectric constant can be well reduced by the presence of the high-carbon-concentration film6b.
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Chiang et al., “TDDB Reliability Improvements in Cu Damascene by using a Bilayer-Structured PECVD SiC Dielectric Barrier”, IEEE International Interconnect Technology Conference (IITC) 2002, pp. 1-3.
Endo Kazuhiko
Morita Noboru
Ohto Koichi
Usami Tatsuya
Duong Khanh B
NEC Corporation
Renesas Electronics Corporation
Smith Zandra
Sughrue & Mion, PLLC
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