Stock material or miscellaneous articles – Composite – Of silicon containing
Reexamination Certificate
2011-03-08
2011-03-08
Nakarani, D. S (Department: 1787)
Stock material or miscellaneous articles
Composite
Of silicon containing
C428S209000, C428S447000, C428S450000
Reexamination Certificate
active
07901783
ABSTRACT:
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
REFERENCES:
patent: 4168330 (1979-09-01), Kaganowicz
patent: 5290736 (1994-03-01), Sato et al.
patent: 5508368 (1996-04-01), Knapp et al.
patent: 5618619 (1997-04-01), Petrmichl et al.
patent: 5679413 (1997-10-01), Petrmichl et al.
patent: 5858880 (1999-01-01), Dobson et al.
patent: 5874367 (1999-02-01), Dobson
patent: 6054379 (2000-04-01), Yau et al.
patent: 6059553 (2000-05-01), Jin et al.
patent: 6194029 (2001-02-01), Aoi
patent: 6242366 (2001-06-01), Beekman et al.
patent: 6287989 (2001-09-01), Dobson
patent: 6475564 (2002-11-01), Carter et al.
patent: 6544858 (2003-04-01), Beekman et al.
patent: WO 98/08249 (1998-02-01), None
G. Sugahara, N. Aoi, M. Kubo, K. Arai and K. Sawada; “Low Dielectric Constant Carbon Containing SiO2Films Deposited by PECVD Technique Using a Novel CVD Precursor”; Feb. 1997; pp. 19-25.
Akiko Nara and Hitoshi Itoh; “Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O2”; Mar. 1997, vol. 36, Pt. 1. No. 3B; pp. 1477-1480.
Favia, P. et al., “The Role of Substrate Temperature and Bias in the Plasma Deposition from Tetramethylsilane,”Plasma Sources Sci. Technol. 1, 1992, pp. 59-66.
Favia, P., “Plasma Deposition of Thin Films from a Fluorine-Containing Cyclosiloxane,”Journal of Polymer Science: Part A: Polymer Chemistry, 1992, 10 pages.
Hazari, V. et al., “Characterization of Alternative Chemistries for Depositing PECVD Silicon Dioxide Films,” DUMIC Conference, IMIC-333D/98/0319, pp. 219-236, Feb. 1998.
Inagaki, N. et al., “Plasma Polymerization of Organosilicon Compounds,”Journal of Applied Polymer Science, vol. 30, pp. 3385-3395.
Inagaki, N. et al., “Preparation of Siloxane-Like Films by Glow Discharge Polymerization,”Journal of Applied Polymer Science, vol. 29, pp. 3595-3605, 1984.
Inoue et al., “Spectroscopic Studies on Preparation of Silicon Oxide Films by PECVD Using Organosilicon Compounds,”Plasma Sources Sci. Technol. 5, 1996, pp. 339-343.
Kim, D.S., “Deposition of Thermally Stable, Low Dielectric Constant Fluorocarbon/SiO2Composite Thin Film,” American Institute of Physics,Appl. Phys. Lett., vol. 69, No. 18, Oct. 8, 1996, pp. 2776-2778.
McCabe, A.R. et al., “Large Area Diamond-Like Carbon Coatings by Ion Implantation,”Surface Engineering, vol. III: Process Technology and Surface Analysis, pp. 163-172, 1995.
Nguyen, V. S. et al., “Plasma Organosilicon Polymers,”J. Electrochem. Soc., Solid-State Science and Technology, vol. 132, No. 8, pp. 1925-1932, Aug. 1985.
Osada, Y. et al., “Plasma-Exposed Polymerization of Cyclic Organosiloxanes in the Condensed Phase,”Journal of Polymer Science: Polymer Letters Edition, vol. 19, 1981, pp. 369-374.
Rau, C. et al., “Mechanisms of Plasma Polymerization of Various Silico-Organic Monomers,”Thin Solid Films249, pp. 28-37, 1994.
Sahli S. et al., “Properties of Plasma-Polysiloxane Deposited by PECVD,” Materials Chemistry and Physics, vol. 33, 1993, pp. 106-109.
Segui, Y. et al., “In Situ Electrical Property Measurements of Metal (Plasma Polysiloxane)/Metal Structures,”Thin Solid Films, 155, 1987, Electronics and Optics, pp. 175-185.
Segui, Y. et al., “Gas Discharge in Hexamethyldisiloxane,” Journal of Applied Polymer Science, vol. 20, pp. 1611-1618, 1976.
Taylor, K. et al., “Parylene Copolymers,” 1997 Spring MRS Symposium N, pp. 1-9.
Theil, J. et al., “Carbon Content of Silicon Oxide Films Deposited by Room Temperature Plasma Enhanced Chemical Vapor Deposition of Hexamethyldisiloxane and Oxygen,”Journal of Vacuum Science Technology, A 12(4), Jul./Aug. 1994, pp. 1365-1370.
Wertheimer, M. et al., “Advances in Basic and Applied Aspects of Microwave Plasma Polymerization”, Thin Solid Films, 115, 1984, pp. 109-124.
Wrobel, A. et al., “Oligomeric Products in Plasma-Polymerized Organosilicones,” J. Macromol. Sci-Chem., A20(5&6), pp. 583-618, 1983.
Non-Final Office Action for U.S. Appl. No. 09/067,704 mailed on Jul. 12, 1999; 6 pages.
Notice of Allowance for U.S. Appl. No. 09/067,704 mailed on Dec. 20, 1999; 5 pages.
Non-Final Office Action for U.S. Appl. No. 09/361,667 mailed on Nov. 20, 2000, 7 pages.
Non-Final Office Action for U.S. Appl. No. 09/361,667 mailed on Jan. 7, 2002, 8 pages.
Final Office Action for U.S. Appl. No. 09/361,667 mailed on Oct. 29, 2002; 6 pages.
Notice of Allowance for U.S. Appl. No. 09/361,667 mailed on Jul. 30, 2001; 5 pages.
Non-Final Office Action for U.S. Appl. No. 10/637,913 mailed Jun. 17, 2005; 13 pages.
Notice of Allowance for U.S. Appl. No. 10/637,913 mailed on Nov. 11, 2005; 10 pages.
Felts John
Lopata Eugene
Rose Peter
Applied Materials Inc.
Nakarani D. S
Townsend and Townsend and Crew
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