Magnetic tunnel junction and memory device including the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S295000, C257SE27005, C257SE43004, C257SE21665, C365S032000, C365S033000, C365S050000, C365S055000, C365S066000, C365S074000, C365S080000, C365S097000, C365S130000, C365S131000, C365S171000

Reexamination Certificate

active

07378698

ABSTRACT:
A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.

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