Semiconductor memory and fabrication method for the same

Details Semiconductor memory and fabrication method for the same Semiconductor memory and fabrication method for the same

2011-03-22

2011-03-22

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C257SE21043, C257SE21179, C257SE21194

Reexamination Certificate

active

07910424

ABSTRACT:
A semiconductor memory includes memory cell transistors including a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide film; low-voltage transistors having a first p-type source region and a first p-type drain region, a first gate insulating film, and a first gate electrode of an n conductivity type having the same dose of a first p-type impurity as with the first p-type source region; and high-voltage transistors having a second p-type source region and a second p-type drain region, a second gate insulating film thicker than the first gate insulating film, and a second gate electrode of an n conductivity type having the same dose of a second p-type impurity as with the second p-type source region.

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Kyung-Joong Joo, et al. “A New Cobalt Polycide Technology for High Density NAND Flash Memories”, 2001 NVSMW, Aug. 2001, pp. 64-66.

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