Semiconductor device and method for fabricating same

Details Semiconductor device and method for fabricating same Semiconductor device and method for fabricating same

2008-04-15

2008-04-15

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C257SE21267

Reexamination Certificate

active

07358198

ABSTRACT:
A method is provided with:arranging nitrogen atoms on a surface of a silicon substrate;performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms existing on the surface of the silicon substrate are brought into a three-coordinate bond state; andforming a silicon oxide film on the silicon substrate with the three-coordinate bond state of nitrogen atoms and the silicon atoms being maintained.

REFERENCES:
patent: 5464783 (1995-11-01), Kim et al.
patent: 5969397 (1999-10-01), Grider, III et al.
patent: 5972804 (1999-10-01), Tobin et al.
patent: 6252296 (2001-06-01), Umeda et al.
patent: 6417570 (2002-07-01), Ma et al.
patent: 6521912 (2003-02-01), Sakama et al.
patent: 6953727 (2005-10-01), Hori
patent: 2005/0106894 (2005-05-01), Aoki et al.
patent: 8-37184 (1996-02-01), None
patent: 10-163197 (1998-06-01), None
patent: 10-199878 (1998-07-01), None
patent: H11-121453 (1999-04-01), None
patent: 11-340224 (1999-12-01), None
patent: 2000-269355 (2000-09-01), None
patent: 2001-203198 (2001-07-01), None
Sukmin Jeong, et al., “Atomic and Electronic Structures of N-Incorporated Si Oxides”, Physical Review Letters, Apr. 16, 2001, v.86, pp. 3574-3577.
J. Stober, et al., “Initial Stages of the Thermal Nitridation of the Si(100) Surface with NH3and NO: A Surface Sensitive Study of Si 2p Core-Level Shifts”, Surface Science, 321 (1994) pp. 111-126.
U.S. Appl. No. 11/250,439, filed Oct. 17, 2005, Aoki et al.

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