Method of manufacturing semiconductor memory device

Details Method of manufacturing semiconductor memory device Method of manufacturing semiconductor memory device

2011-01-18

2011-01-18

Quach, Tuan N. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S213000, C438S257000, C257SE21422

Reexamination Certificate

active

07871879

ABSTRACT:
A method of manufacturing a semiconductor memory device includes forming a device separation film on a semiconductor substrate using a mask pattern for defining an entire source line region as an active region to separate a device separation region from an active region; forming a stack gate structure on the semiconductor substrate; forming a common source line by implanting impurity ions into the semiconductor substrate in the source line region; and performing an impurity ion implantation process on the semiconductor substrate to form a drain region.

REFERENCES:
patent: 6737321 (2004-05-01), Lee
patent: 7473600 (2009-01-01), Yoo et al.
patent: 2002/0110973 (2002-08-01), Liou et al.
patent: 2004/0079984 (2004-04-01), Kao et al.
patent: 2006/0292781 (2006-12-01), Lee
patent: 2007/0148870 (2007-06-01), Shin

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