Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-07-12

2011-07-12

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S287000, C438S288000, C438S589000, C257SE21428

Reexamination Certificate

active

07977189

ABSTRACT:
The present invention relates to a semiconductor device that includes a semiconductor substrate (10) having source/drain diffusion regions (14) formed therein and control gates (20) formed thereon, with grooves (18) being formed on the surface of the semiconductor substrate (10) and being located below the control gates (20) and between the source/drain diffusion regions (14). The grooves (18) are separated from the source/drain diffusion regions (14), thereby increasing the effective channel length to maintain a constant channel length for charge accumulation while enabling the manufacture of smaller memory cells. The present invention also provides a method of manufacturing the semiconductor device.

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