Resistance random access memory having common source line

Details Resistance random access memory having common source line Resistance random access memory having common source line

2011-03-08

2011-03-08

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000

Reexamination Certificate

active

07903448

ABSTRACT:
A resistance random access memory (RRAM) having a source line shared structure and an associated data access method. The RRAM, in which a write operation of writing data of first state and second state to a selected memory cell is performed through first and second write paths having mutually opposite directions, includes word lines, bit lines, a memory cell array and a plurality of source lines. The memory cell array includes a plurality of memory cells each constructed of an access transistor coupled to a resistive memory device. The memory cells are disposed in a matrix of rows and columns and located at each intersection of a word line and a bit line. Each of the plurality of source lines is disposed between a pair of word lines and in the same direction as the word lines. A positive voltage is applied to a source line in a memory cell write operation. Through the source line shared structure, occupied chip area is reduced and, in a write operating mode, a bit line potential can be determined within a positive voltage level range.

REFERENCES:
patent: 5748531 (1998-05-01), Choi
patent: 6084799 (2000-07-01), Tanzawa et al.
patent: 7187577 (2007-03-01), Wang et al.
patent: 2006/0067114 (2006-03-01), Hachino et al.
patent: 1020040002697 (2004-01-01), None

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