Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Mulpuri, Savitri (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29291, C257S057000
Reexamination Certificate
active
07977741
ABSTRACT:
A layered film of a three-layer clad foil formed with a first metal layer23, a second metal layer25, and an inorganic insulating layer35interposed therebetween is prepared. After the second metal layer25is partially etched to form a gate electrode20g, the first metal layer23is partially etched to form source/drain electrodes20s,20din a region corresponding to the gate electrode20g. A semiconductor layer40is then formed in contact with the source/drain electrodes20s,20dand on the gate electrode20gwith the inorganic insulating layer35interposed therebetween. The inorganic insulating layer35on the gate electrode20gfunctions as a gate insulating film30, and the semiconductor layer40between the source/drain electrodes20s,20don the inorganic insulating layer35functions as a channel.
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U.S. Notice of Allowance issued in U.S. Appl. No. 12/518,602, mailed Sep. 7, 2010.
Hirano Koichi
Ichiryu Takashi
Komatsu Shingo
Nakatani Seiichi
Yamashita Yoshihisa
McDermott Will & Emery LLP
Mulpuri Savitri
Panasonic Corporation
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