Methods for the formation of interconnects separated by air...

Details Methods for the formation of interconnects separated by air... Methods for the formation of interconnects separated by air...

2011-07-12

2011-07-12

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S689000, C438S745000, C438S756000, C438S757000, C257SE21221, C257SE21223, C257SE21309

Reexamination Certificate

active

07977228

ABSTRACT:
The microelectronic device interconnects are fabricated by a process that utilizes a silicon-based interlayer dielectric material layer, such as carbon-doped oxide, and a chemical mixture selective to materials used in the formation of the interconnects, including, but not limited to, copper, cobalt, tantalum, and/or tantalum nitride, to remove the interlayer dielectric material layer between adjacent interconnects thereby forming air gaps therebetween.

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