Semiconductor device

Details Semiconductor device Semiconductor device

2011-03-01

2011-03-01

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S627000

Reexamination Certificate

active

07898033

ABSTRACT:
A semiconductor device according to this invention is provided with a MOS transistor of at least one type, wherein the MOS transistor has a semiconductor layer (SOI layer) provided on an SOI substrate and a gate electrode provided on the SOI layer and is normally off by setting the thickness of the SOI layer so that the thickness of a depletion layer caused by a work function difference between the gate electrode and the SOI layer becomes greater than that of the SOI layer.

REFERENCES:
patent: 3958266 (1976-05-01), Athanas
patent: 6903393 (2005-06-01), Ohmi et al.
patent: 4-367278 (1992-12-01), None
patent: 7-086422 (1995-03-01), None
patent: 2003-115587 (2003-04-01), None
patent: 2003-209258 (2003-07-01), None

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