Embedded multi-inductive large area plasma source

Details Embedded multi-inductive large area plasma source Embedded multi-inductive large area plasma source

2011-07-12

2011-07-12

Alejandro, Luz L. (Department: 1716)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With radio frequency antenna or inductive coil gas...

C118S7230IR, C118S7230AN, C315S111510

Reexamination Certificate

active

07976674

ABSTRACT:
Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communication with a plasma processing chamber. Plasma is generated and maintained by a shaped low-inductance element within each of a plurality of locally enhanced ICP micro-cells coupled to the chamber through a CCP electrode. The source is suitable for processing large diameter (300 mm and larger) semiconductor wafers and large area panels, including plasma screen displays.

REFERENCES:
patent: 5122251 (1992-06-01), Campbell et al.
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5683548 (1997-11-01), Hartig et al.
patent: 6024826 (2000-02-01), Collins et al.
patent: 6054013 (2000-04-01), Collins et al.
patent: 6143129 (2000-11-01), Savas et al.
patent: 6244211 (2001-06-01), Nishikawa et al.
patent: 6578515 (2003-06-01), Sakamoto et al.
patent: 6908862 (2005-06-01), Li et al.
patent: 2003/0200929 (2003-10-01), Otsuki
patent: 2005/0103445 (2005-05-01), Brcka et al.
U.S. Patent and Trademark Office, Office Action, from U.S. Appl. No. 11/694,354, dated Jun. 11, 2009.
U.S. Patent and Trademark Office, Final Office action, from U.S. Appl. No. 11/694,354, dated Jan. 7, 2010.
U.S. Patent and Trademark Office, Advisory Action, from U.S. Appl. No. 11/694,354, dated Mar. 25, 2010.

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