Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-08-16
2011-08-16
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C257SE21211
Reexamination Certificate
active
07998775
ABSTRACT:
When a native oxide grows on a polysilicon member of, e.g., a MEMS device, delamination between the polysilicon member and subsequently formed layers may occur because the native oxide is undercut during removal of sacrificial oxide layers. Nitriding the native oxide increases the etch selectivity relative the sacrificial oxide layers. Undercutting and delamination is hence reduced or eliminated altogether.
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Cheng Chun-Ren
Lee Jiou-Kang
Peng Jung-Huei
Tsai Shang-Ying
Wu Ting-Hau
Mulpuri Savitri
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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