Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2011-01-11
2011-01-11
Ahmed, Shamim (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
C216S067000, C427S008000, C427S569000, C438S706000, C438S710000
Reexamination Certificate
active
07867409
ABSTRACT:
A manufacturing method and apparatus for IC fabrication controls the ion angular distribution at the surface of a wafer with electrodes in a wafer support that produce electric fields parallel to the wafer surface without disturbing plasma parameters beyond the wafer surface. The ion angular distribution function (IADF) at the wafer surface is controlled for better feature coverage or etching. Grid structure is built into the substrate holder within the coating at the top of the holder. The grid components are electrically biased to provide electric fields that combine with the sheath field to distribute the ion incidence angles from the plasma sheath onto the wafer. The grid can be dynamically biased or phased to control uniformity of the effects.
REFERENCES:
patent: 5451784 (1995-09-01), Loewenhardt et al.
patent: 5565681 (1996-10-01), Loewenhardt et al.
patent: 7572737 (2009-08-01), Dhindsa
I R Woodworth et al. “Experimental an dtheoritical study of Ion distributions near 300 micrometer tall steps on rf-biased wafers in high density plasmas” J.Vac.Sci. Technol. A 21(1) Jan./Feb. 2003, p. 147-155.
Ahmed Shamim
Tokyo Electron Limited
Wood Herron & Evans L.L.P.
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