Method of forming isolation layer in semiconductor device

Details Method of forming isolation layer in semiconductor device Method of forming isolation layer in semiconductor device

2011-06-21

2011-06-21

Pert, Evan (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S207000, C438S221000, C438S294000, C438S778000, C257SE21545, C257SE21548

Reexamination Certificate

active

07964461

ABSTRACT:
The present invention is related to a method of forming an isolation layer in a semiconductor device and comprises the steps of forming a tunnel insulating layer and conductive layer patterns on an active area of a semiconductor substrate, the width of an upper portion of the conductive layer patterns being narrower than that of a lower portion; forming a trench between the conductive layer patterns on the semiconductor substrate; forming an insulating layer to fill a portion of the trench with the insulating layer; and performing an etching process to remove an overhang of the insulating layer formed at an upper edge of the conductive layer patterns. Here, the step of forming the insulating layer and the step of performing the etching process are repeatedly performed until a space between the conductive layer patterns and the trench are filled with the insulating layer.

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