Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

Filed on

2011-03-01

Date issued

2011-03-01

Examiner

Lee, Calvin (Department: 2892)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

C257S330000

Type

Reexamination Certificate

Status

active

Patent number

07897461

Description

ABSTRACT:
Disclosed is a semiconductor device having an n-type drain region, a low concentration p-type body region formed on the n-type drain region, an n-type source region formed on the low concentration p-type body region, a high concentration p-type body region formed on the low concentration p-type body region, a gate insulating film, and a gate electrode, wherein a plurality of trenches T which extend in a same direction and each of which forms a continuous concavo-convex shape when viewed from above are formed from top faces of the source region and the high concentration body region and pass through the low concentration body region to reach into the drain region, and wherein the gate electrode is buried in each of the plurality of trenches. A maximum distance between two adjacent trenches T of the n-type source region is greater than a maximum distance between the two adjacent trenches T of the high concentration p-type body region.

REFERENCES:
patent: 4663644 (1987-05-01), Shimizu
patent: 6060747 (2000-05-01), Okumura et al.
patent: 7075147 (2006-07-01), Cao
patent: 2007/0007588 (2007-01-01), Ishida et al.
patent: 61-161766 (1986-07-01), None
patent: 62-126674 (1987-06-01), None
patent: 2005-045123 (2005-02-01), None

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