Replacing symmetric transistors with asymmetric transistors

Details Replacing symmetric transistors with asymmetric transistors Replacing symmetric transistors with asymmetric transistors

2011-06-14

2011-06-14

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257SE21620, C257SE29279

Reexamination Certificate

active

07960788

ABSTRACT:
A semiconductor structure includes a symmetric metal-oxide-semiconductor (MOS) transistor comprising a first and a second asymmetric MOS transistor. The first asymmetric MOS transistor includes a first gate electrode, and a first source and a first drain adjacent the first gate electrode. The second asymmetric MOS transistor includes a second gate electrode, and a second source and a second drain adjacent the second gate electrode. The first gate electrode is connected to the second gate electrode, wherein only one of the first source and the first drain is connected to only one of the respective second source and the second drain.

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