Structure and method of fabricating FinFET

Details Structure and method of fabricating FinFET Structure and method of fabricating FinFET

2011-06-07

2011-06-07

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21468

Reexamination Certificate

active

07955928

ABSTRACT:
A CMOS FinFET device and a method of manufacturing the same using a three dimensional doping process is provided. The method of forming the CMOS FinFET includes forming fins on a first side and a second side of a structure and forming spacers of a dopant material having a first dopant type on the fins on the first side of the structure. The method further includes annealing the dopant material such that the first dopant type diffuses into the fins on the first side of the structure. The method further includes protecting the first dopant type from diffusing into the fins on the second side of the structure during the annealing.

REFERENCES:
patent: 6770516 (2004-08-01), Wu et al.
patent: 2007/0257315 (2007-11-01), Bedell et al.
patent: 2008/0224256 (2008-09-01), Chou et al.
patent: 2008/0258220 (2008-10-01), Bedell et al.

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