Shallow source MOSFET

Details Shallow source MOSFET Shallow source MOSFET

2011-08-30

2011-08-30

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C257SE21655

Reexamination Certificate

active

08008151

ABSTRACT:
A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate, through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate structure that extends substantially above the top substrate surface.

REFERENCES:
patent: 4156246 (1979-05-01), Pedersen
patent: 4521795 (1985-06-01), Coe et al.
patent: 4823172 (1989-04-01), Mihara
patent: 4967243 (1990-10-01), Baliga et al.
patent: 4967245 (1990-10-01), Cogan et al.
patent: 4983535 (1991-01-01), Blanchard
patent: 5111253 (1992-05-01), Korman et al.
patent: 5164325 (1992-11-01), Cogan et al.
patent: 5366914 (1994-11-01), Takahashi et al.
patent: 5378655 (1995-01-01), Hutchings et al.
patent: 5567364 (1996-10-01), Philipps
patent: 5576245 (1996-11-01), Cogan et al.
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 5665619 (1997-09-01), Kwan et al.
patent: 5693569 (1997-12-01), Ueno
patent: 5828100 (1998-10-01), Tamba et al.
patent: 5886383 (1999-03-01), Kizner
patent: 5929482 (1999-07-01), Kawakami et al.
patent: 5986304 (1999-11-01), Hshieh et al.
patent: 6037628 (2000-03-01), Huang
patent: 6110799 (2000-08-01), Huang
patent: 6251730 (2001-06-01), Luo
patent: 6351018 (2002-02-01), Sapp
patent: 6359306 (2002-03-01), Ninomiya
patent: 6433396 (2002-08-01), Kinzer
patent: 6498071 (2002-12-01), Hijzen et al.
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 6638826 (2003-10-01), Zeng et al.
patent: 6686614 (2004-02-01), Tihanyi
patent: 6737704 (2004-05-01), Takemori et al.
patent: 6774408 (2004-08-01), Ninomiya
patent: 6818946 (2004-11-01), Venkatraman
patent: 6841836 (2005-01-01), Saggio et al.
patent: 6858896 (2005-02-01), Inagawa et al.
patent: 6872611 (2005-03-01), Takemori et al.
patent: 6987305 (2006-01-01), He et al.
patent: 6998678 (2006-02-01), Werner et al.
patent: 2002/0115257 (2002-08-01), Inagawa et al.
patent: 2002/0140026 (2002-10-01), Ishikawa et al.
patent: 2004/0195608 (2004-10-01), Kim et al.
patent: 09-102602 (1997-04-01), None

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