CMOS structure including differential channel stressing...

Details CMOS structure including differential channel stressing... CMOS structure including differential channel stressing...

2011-01-25

2011-01-25

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S044000, C438S093000, C438S197000, C438S222000, C438S285000, C438S413000, C438S416000, C438S429000, C438S442000, C257S049000, C257S338000, C257S350000, C257S351000, C257S371000, C257SE29021, C257SE29025, C257SE29027, C257SE29047

Reexamination Certificate

active

07875511

ABSTRACT:
A CMOS structure includes an n-FET device comprising an n-FET channel region and a p-FET device comprising a p-FET channel region. The n-FET channel region includes a first silicon material layer located upon a silicon-germanium alloy material layer. The p-FET channel includes a second silicon material layer located upon a silicon-germanium-carbon alloy material layer. The silicon-germanium alloy material layer induces a desirable tensile strain within the n-FET channel. The silicon-germanium-carbon alloy material layer suppresses an undesirable tensile strain within the p-FET channel region. A silicon-germanium-carbon alloy material from which is comprised the silicon-germanium-carbon alloy material layer may be formed by selectively incorporating carbon into a silicon-germanium alloy material from which is formed the silicon-germanium alloy material layer.

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