Shallow trench isolation

Details Shallow trench isolation Shallow trench isolation

2011-08-16

2011-08-16

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S208000, C438S216000, C438S406000, C438S424000

Reexamination Certificate

active

07998815

ABSTRACT:
Shallow trench isolation methods are disclosed. In a particular embodiment, a method includes implanting oxygen under a bottom surface of a narrow trench of a silicon substrate and performing a high-temperature anneal of the silicon substrate to form a buried oxide layer. The method also includes performing an etch to deepen the narrow trench to reach the buried oxide layer. The method further includes depositing a filling material to form a top filling layer in the narrow trench.

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International Search Report-PCT/US2009/053879, International Search Authority-European Patent Office Nov. 5, 2009.
Written Opinion-PCT/US2009/053879, International Search Authority-European Patent Office Nov. 5, 2009.

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