Semiconductor device and method of fabricating the...

Details Semiconductor device and method of fabricating the... Semiconductor device and method of fabricating the...

2011-08-09

2011-08-09

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07994013

ABSTRACT:
A semiconductor device comprises a gate electrode on a semiconductor substrate, drift regions at opposite sides of the gate electrode, source and drain regions in the respective drift regions, and shallow trench isolation (STI) regions in the respective drift regions between the gate electrode and the source or drain region, wherein the drift regions comprise first and second conductivity-type impurities.

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patent: 2002/0132406 (2002-09-01), Disney
patent: 2002/0137318 (2002-09-01), Peake et al.
patent: 2008/0290411 (2008-11-01), Lee
patent: 1926690 (2007-03-01), None
Huang Chih-Feng Yang; “Isolated High-Voltage LDMOS Transistor Having a Split Well Structure”; esp@cenet; Chinese Publication No. CN1926690 (A); Publication Date: Mar. 7, 2007; esp@cenet Database—Worldwide.
Partial Chinese Office Action date stamped Jul. 24, 2009; Chinese Patent Application No. 2008101248935; The State Intellectual Property Office of P.R.C., People's Republic of China.

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