Method of manufacturing a semiconductor device including...

Details Method of manufacturing a semiconductor device including... Method of manufacturing a semiconductor device including...

2011-03-08

2011-03-08

Sefer, A. (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S786000, C257SE29130

Reexamination Certificate

active

07902027

ABSTRACT:
A semiconductor device includes a recessed-channel-array MOSFET including a gate electrode having a portion received in a recess. The gate insulting film has a first portion made of silicon oxide in contact with the sidewall of the recess and a second portion made of silicon oxynitride in contact with the bottom of the recess. The first portion has an equivalent oxide thickness larger than the equivalent oxide thickness of the second portion to reduce the parasitic capacitance of the gate electrode.

REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
patent: 7148527 (2006-12-01), Kim et al.
patent: 7262098 (2007-08-01), Alessandri et al.
patent: 2001/0016412 (2001-08-01), Lee et al.
patent: 2005/0020086 (2005-01-01), Kim et al.
patent: 2005/0236664 (2005-10-01), Aoki et al.
patent: 2006/0003542 (2006-01-01), Suzuki et al.
patent: 2006/0091482 (2006-05-01), Kim et al.
patent: 2007/0082454 (2007-04-01), Strommer et al.
patent: 2008/0029834 (2008-02-01), Sell
patent: 07-099310 (1995-04-01), None
patent: 2005-019473 (2005-01-01), None
patent: 2007-110125 (2007-04-01), None
J.Y. Kim et al., “The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor (RCAT) for 88nm feature size and beyond”, 2003, Symposium on VLSI Technology Digest of Technical Papers, No. 4-89114-035-6/03.
Japanese Patent Office issued a Japanese Office Action dated Mar. 26, 2009, Application No. 2006-222158.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device including... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device including..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device including... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2692582