Method of operating a magnetoresistive RAM

Details Method of operating a magnetoresistive RAM Method of operating a magnetoresistive RAM

2011-05-31

2011-05-31

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S171000, C365S225500, C365S243500, C977S935000

Reexamination Certificate

active

07952918

ABSTRACT:
A magnetoresistive random access memory (RAM) may include a plurality of variable resistance devices, a plurality of read bitlines electrically connected to respective variable resistance devices, and a plurality of write bitlines alternating with the read bitlines. The magnetoresistive RAM may be configured to apply a first write current through a first write bitline adjacent to a first variable resistance device when writing a first data to the first variable resistance device, and apply a first inhibition current through a second write bitline adjacent to a second variable resistance device, the second variable resistance device being adjacent to the first write bitline, and between the first write bitline and the second write bitline, and the first write current and the first inhibition current flowing in a same direction.

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