Semiconductor using specific contact angle for immersion...

Details Semiconductor using specific contact angle for immersion... Semiconductor using specific contact angle for immersion...

2011-05-24

2011-05-24

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Miscellaneous

C438S800000

Reexamination Certificate

active

07948096

ABSTRACT:
A semiconductor device having a specific contact angle for immersion lithography is disclosed. The semiconductor device includes a substrate and a top layer disposed on the substrate. The top layer used in an immersion lithography process includes a composition such that a fluid droplet that occurs during the immersion lithographic process and is not part of an exposure fluid puddle, will have a contact angle between about 40° and about 80° with a surface of the top layer.

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