Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-03-22

2011-03-22

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S300000, C257S306000, C257S310000, C257SE21664, C438S003000, C438S396000

Reexamination Certificate

active

07910968

ABSTRACT:
A ferroelectric capacitor (42) is formed over a semiconductor substrate (10), and thereafter, a barrier film (46) directly covering the ferroelectric capacitor (42) is formed. Then, an interlayer insulating film (48) is formed and flattened. Then, an inclined groove is formed in the interlayer insulating film (48), and a barrier film (50) is formed over the entire surface.

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