Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-19
2011-07-19
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S675000, C438S617000, C438S123000
Reexamination Certificate
active
07981796
ABSTRACT:
An apparatus and methods for packaging semiconductor devices are disclosed. The apparatus is applicable to many types of contemporary packaging schemes that utilize a sacrificial metal base strip. Tunnels formed through an encapsulation area surrounding the device and associated bond wires are filled with a metallic conductor by, for example, electroplating, and extend bottom contact pads to an uppermost portion of the encapsulated area. The sacrificial metal base strip serves as a plating bus and is etch-removed after plating. The filled tunnels allow components to be stacked in a three-dimensional configuration.
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Atmel Corporation
Fish & Richardson P.C.
Thai Luan C
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