Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-03-22

2011-03-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C257SE21431, C257SE21093

Reexamination Certificate

active

07910445

ABSTRACT:
A method of fabricating a semiconductor device according to one embodiment of the invention includes: forming a gate electrode on a semiconductor substrate through a gate insulating film; forming offset spacers on side surfaces of the gate electrode, respectively; etching the semiconductor substrate with a channel region below the offset spacers and the gate electrode being left by using the offset spacers as a mask; forming a first epitaxial layer made of a crystal having a lattice constant different from that of a crystal constituting the semiconductor substrate on the semiconductor substrate thus etched; etching at least a portion of the first epitaxial layer adjacent to the channel region to a predetermined depth from a surface of the first epitaxial layer toward the semiconductor substrate side; and forming a second epitaxial layer containing therein a conductivity type impurity on the first epitaxial layer thus etched.

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