Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier
Reexamination Certificate
2011-08-23
2011-08-23
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
With attachment to temporary support or carrier
C438S122000, C257S702000, C257S707000
Reexamination Certificate
active
08003496
ABSTRACT:
A semiconductor device is made by forming a heat spreader over a temporary carrier. A semiconductor die is mounted to the heat spreader. A first polymer layer is formed over the semiconductor die and heat spreader. A first conductive layer is formed over the first polymer layer. The first conductive layer is connected to the heat spreader and contact pads on the semiconductor die. A second polymer layer is formed over the first conductive layer. A second conductive layer is formed over the second polymer layer. The second conductive layer is electrically connected to the first conductive layer. Bumps are formed through a solder masking layer on the second conductive layer. The temporary carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first and second conductive layers.
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Kim Jin-Gwan
Lee SinJae
Oh JiHoon
Atkins Robert D.
Landau Matthew C
Mitchell James M
Patent Law Group
STATS ChipPAC Ltd.
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