Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-08
2011-03-08
Warren, Matthew E (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S270000, C438S275000, C438S303000, C438S735000, C438S911000, C257SE21626, C257SE21640
Reexamination Certificate
active
07902021
ABSTRACT:
A method for making a semiconductor device is disclosed. In accordance with the method, a semiconductor structure is provided which includes (a) a substrate (203), (b) first and second gate electrodes (219) disposed over the substrate, each of the first and second gate electrodes having first and second sidewalls, and (c) first (223) and second (225) sets of spacer structures disposed adjacent to the first and second gate electrodes, respectively. A first layer of photoresist (231) is then disposed over the structure such that the first set of spacer structures is exposed and the second set of spacer structures is covered, after which the first set of spacer structures is partially etched.
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Chen David Z
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Warren Matthew E
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