Flash memory device and method of fabricating the same

Details Flash memory device and method of fabricating the same Flash memory device and method of fabricating the same

2011-01-18

2011-01-18

Parker, Kenneth A (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S166000, C438S257000, C438S592000, C438S594000, C257SE21621

Reexamination Certificate

active

07871910

ABSTRACT:
A flash memory device and method of fabricating thereof. In accordance with the method of the invention, a tunnel dielectric layer and an amorphous first conductive layer are formed over a semiconductor substrate. An annealing process to change the amorphous first conductive layer to a crystallized first conductive layer is performed. A second conductive layer is formed on the crystallized first conductive layer. A first etch process to pattern the second conductive layer is performed. A second etch process to remove an oxide layer on the crystallized first conductive layer is performed. A third etch process to pattern the amorphous first conductive layer is performed.

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