Sequential deposition of tantalum nitride using a...

Details Sequential deposition of tantalum nitride using a... Sequential deposition of tantalum nitride using a...

2011-01-11

2011-01-11

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S785000, C257SE21168, C257SE21170

Reexamination Certificate

active

07867896

ABSTRACT:
Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.

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