Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S429000, C438S223000, C438S210000, C257SE21409
Reexamination Certificate
active
07915131
ABSTRACT:
A semiconductor device includes: an isolation region formed in a semiconductor substrate; active regions surrounded by the isolation region and including p-type and n-type regions, respectively; an NMOS transistor formed in the active region including the p-type region and including an n-type gate electrode; a PMOS transistor formed in the active region including the n-type region and including a p-type gate electrode; and a p-type resistor formed on the isolation region. The p-type resistor has an internal stress greater than that of the p-type gate electrode.
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Nakagawa Ryo
Yamada Takayuki
McDermott Will & Emery LLP
Panasonic Corporation
Thai Luan C
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