Method for fabricating MIM structure capacitor

Details Method for fabricating MIM structure capacitor Method for fabricating MIM structure capacitor

2011-07-12

2011-07-12

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S957000, C257SE21646

Reexamination Certificate

active

07977184

ABSTRACT:
A method for fabricating a metal/insulator/metal (MIM) structure capacitor includes forming a nitride film that is an insulating layer on a bottom electrode metal layer; forming titanium/titanium nitride (Ti/TiN) that is a top electrode metal layer on the nitride film; coating photo-resist on the top electrode metal layer and patterning a photo-resist layer; selectively etching the top metal electrode layer so that the nitride film remains using the patterned photo-resist layer as an etching mask and using the nitride film as an end point; and removing the remaining nitride film.

REFERENCES:
patent: 6451665 (2002-09-01), Yunogami et al.
patent: 6924207 (2005-08-01), Son et al.
patent: 6927142 (2005-08-01), Lee et al.
patent: 7279382 (2007-10-01), Jo

Affiliated with

Also associated with

Rating

Method for fabricating MIM structure capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating MIM structure capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating MIM structure capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2671721