Methods for fabricating a metal-oxide-semiconductor device...

Details Methods for fabricating a metal-oxide-semiconductor device... Methods for fabricating a metal-oxide-semiconductor device...

2011-05-31

2011-05-31

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S151000, C438S149000, C438S311000, C257SE21444

Reexamination Certificate

active

07951660

ABSTRACT:
A method for fabricating a metal-oxide-semiconductor device structure. The method includes introducing a dopant species concurrently into a semiconductor active layer that overlies an insulating layer and a gate electrode overlying the semiconductor active layer by ion implantation. The thickness of the semiconductor active layer, the thickness of the gate electrode, and the kinetic energy of the dopant species are chosen such that the projected range of the dopant species in the semiconductor active layer and insulating layer lies within the insulating layer and a projected range of the dopant species in the gate electrode lies within the gate electrode. As a result, the semiconductor active layer and the gate electrode may be doped simultaneously during a single ion implantation and without the necessity of an additional implant mask.

REFERENCES:
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 2002/0009837 (2002-01-01), Iwamatsu et al.

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